Dislocation density in silicon ingot during a unidirectional solidification process
نویسندگان
چکیده
منابع مشابه
Study on Unidirectional Solidification Ingot with Hollow Lateral Wall Insulation
G. W. Ao, M. G. Shen, Z. S. Zhang, B. L. Li: College of Materials and Metallurgy, University of Science and Technology Liaoning, Anshan City, China Hollow side wall insulation mathematical model of unidirectional solidification temperature field was carried out. With the aid of finite element analysis software ProCAST, directionally solidified ingot temperature field with hollow lateral wall in...
متن کاملEstimation of solidification interface shapes in a boron–phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging
This paper introduces a method for estimating the shape of the solidification front along the height of a directionally-solidified multicrystalline silicon ingot. The technique uses net dopant density images, obtained on wafers via photoluminescence imaging under surface limited conditions, after the impact of grain boundaries is eliminated through an image processing procedure. By modeling the...
متن کاملStudy on Influence of Water-Cooled Stool During the Process of Unidirectional Solidification
The heat flow control is an important link in directional solidification. Mathematical model for unidirectional solidified ingot with multiple sets of cooling system was established. Temperature field and flow field influenced by traditional water-cooled stool and improved one during solidification of a 45 t was carried out by using ProCAST software. The results of temperature distribute and fl...
متن کاملTransition-metal profiles in a multicrystalline silicon ingot
The concentrations of transition-metal impurities in a photovoltaic-grade multicrystalline silicon ingot have been measured by neutron activation analysis. The results show that the concentrations of Fe, Co, and Cu are determined by segregation from the liquid-to-solid phase in the central regions of the ingot. This produces high concentrations near the top of the ingot, which subsequently diff...
متن کاملDislocation Density Reduction in Multicrystalline Silicon through Cyclic Annealing
Multicrystalline silicon solar cells are an important renewable energy technology that have the potential to provide the world with much of its energy. While they are relatively inexpensive, their efficiency is limited by material defects, and in particular by dislocations. Reducing dislocation densities in multicrystalline silicon solar cells could greatly increase their efficiency while only ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Crystallographica Section A Foundations of Crystallography
سال: 2008
ISSN: 0108-7673
DOI: 10.1107/s010876730809716x